A NAND memory is provided that includes a memory cell region and a peripheral region. The peripheral region includes a shallow trench isolation trench disposed in a substrate. The shallow trench isolation trench has a first tab extension and a second tab extension. The first tab extension is disposed at a top portion of the shallow trench isolation trench, and extends in a first direction from the shallow trench isolation trench. The second tab extension is disposed at a top portion of the shallow trench isolation trench, and extends in a second direction from the shallow trench isolation trench.