Invention Grant
- Patent Title: Lateral bipolar junction transistor with abrupt junction and compound buried oxide
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Application No.: US15097548Application Date: 2016-04-13
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Publication No.: US09673307B1Publication Date: 2017-06-06
- Inventor: Kevin K. Chan , Pouya Hashemi , Tak H. Ning , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/735 ; H01L23/31 ; H01L29/161 ; H01L29/20 ; H01L29/10 ; H01L29/08 ; H01L29/737 ; H01L29/165 ; H01L29/04 ; H01L29/06 ; H01L23/29 ; H01L21/683 ; H01L21/02 ; H01L21/308 ; H01L21/265
Abstract:
A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a nucleation dielectric layer; and a base region composed of a germanium containing material or a type III-V semiconductor material in contact with the pedestal of the base region passivating dielectric. An emitter region and collector region may be present on opposing sides of the base region contacting a sidewall of the pedestal of the base region passivating dielectric and an upper surface of the nucleation dielectric layer.
Information query
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