Invention Grant
- Patent Title: Semiconductor device manufacturing method
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Application No.: US15031623Application Date: 2013-12-13
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Publication No.: US09673308B2Publication Date: 2017-06-06
- Inventor: Yusuke Kawase , Kazunori Kanada , Tadaharu Minato
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2013/083458 WO 20131213
- International Announcement: WO2015/087439 WO 20150618
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/04 ; H01L29/66 ; H01L29/08 ; H01L21/324 ; H01L21/265 ; H01L29/167
Abstract:
According to the present invention, since the buffer layer is formed by multiple ion implantations of different acceleration energies and the non-diffusion region in which impurity do not diffuse is left between the buffer layer and the collector layer, the semiconductor device which can supply sufficient holes to the drift layer at the turn-off can be manufactured while the withstand voltage is ensured.
Public/Granted literature
- US20160254372A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2016-09-01
Information query
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