A semiconductor device including a VDMOS device formed therein includes a terminal, or contact, to the drain region of the VDMOS device from the frontside of the device. In one or more implementations, a semiconductor device includes a semiconductor substrate having a first surface and a second surface and a vertical diffused metal-oxide-semiconductor device formed within the semiconductor substrate. The vertical diffused metal-oxide-semiconductor device includes at least one source region formed proximate to the first surface and at least one drain region formed proximate to the second surface. A through-substrate via is formed within the semiconductor substrate, and the through-substrate via electrically connected to the drain region. The through-substrate via provides an electrical interconnection to the drain region from the first surface.