A semiconductor device includes a semiconductor substrate having a base region situated over a drift region, a source trench extending through the base region and into the drift region, the source trench having a shield electrode, a gate trench extending through the base region and into the drift region, the gate trench adjacent the source trench, the gate trench having a gate electrode situated above a buried electrode. The source trench is surrounded by the gate trench. The shield electrode is coupled to a source contact over the semiconductor substrate. The semiconductor device also includes a source region over the base region. The gate trench includes gate trench dielectrics lining a bottom and sidewalls of the gate trench. The source trench includes source trench dielectrics lining a bottom and sidewalls of the source trench.