Invention Grant
- Patent Title: Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
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Application No.: US15236933Application Date: 2016-08-15
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Publication No.: US09673326B2Publication Date: 2017-06-06
- Inventor: Yasushi Tateshita
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2006-333087 20061211; JP2007-308597 20071129
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/51 ; H01L29/45 ; H01L21/8238 ; H01L29/165 ; H01L29/49 ; H01L29/66 ; H01L27/092 ; H01L29/08 ; H01L21/28
Abstract:
A semiconductor device in which sufficient stress can be applied to a channel region due to lattice constant differences.
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