Invention Grant
- Patent Title: Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same
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Application No.: US14569402Application Date: 2014-12-12
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Publication No.: US09676047B2Publication Date: 2017-06-13
- Inventor: Yung Ho Ryu , Seung Woo Choi , Tae Hun Kim , Gyeong Seon Park , Jong Hoon Lim , Sung Joon Kim , Myong Soo Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0028185 20130315; KR10-2014-0029669 20140313
- Main IPC: H01L33/62
- IPC: H01L33/62 ; B23K1/20 ; B23K1/00 ; B23K35/26 ; B23K35/28 ; B23K35/30 ; B23K35/32 ; B23K35/02 ; H01L23/00 ; H01L33/00 ; B23K20/02 ; B23K20/16 ; B23K20/233 ; B23K101/40 ; B23K101/42
Abstract:
A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.
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