Invention Grant
- Patent Title: Wet-etchable, sacrificial liftoff layer compatible with high temperature processing
-
Application No.: US14201009Application Date: 2014-03-07
-
Publication No.: US09676227B2Publication Date: 2017-06-13
- Inventor: Jesse A. Frantz , Jason D. Myers , Robel Y. Bekele , Jasbinder S. Sanghera
- Applicant: Jesse A. Frantz , Jason D. Myers , Robel Y. Bekele , Jasbinder S. Sanghera
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Roy Roberts
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L31/0392 ; H01L31/18 ; H01L21/02

Abstract:
A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate.
Public/Granted literature
- US20140263171A1 Wet-Etchable, Sacrificial Liftoff Layer Compatible with High Temperature Processing Public/Granted day:2014-09-18
Information query