Invention Grant
- Patent Title: Integrated MEMS device
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Application No.: US15144896Application Date: 2016-05-03
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Publication No.: US09676609B2Publication Date: 2017-06-13
- Inventor: Jerwei Hsieh
- Applicant: Asia Pacific Microsystems, Inc.
- Applicant Address: TW Hsinchu
- Assignee: Asia Pacific Microsystems, Inc.
- Current Assignee: Asia Pacific Microsystems, Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Kamrath IP Lawfirm, P.A.
- Agent Alan D. Kamrath
- Priority: TW102201843U 20130128; TW102127210A 20130730
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; B81B7/00 ; B81C1/00
Abstract:
An integrated MEMS device is provided. The integrated MEMS device comprises a circuit chip and a device chip. The circuit chip has a patterned first bonding layer disposed thereon, the bonding layer being composed of a conductive material/materials. The device chip has a first structural layer and a second structural layer, the first structural layer being connected to the second structural layer and the first bonding layer of the circuit chip, and being sandwiched between the second structural layer and the circuit chip. A plurality of hermetic spaces are enclosed by the first structural layer, the second structural layer, the first bonding layer and the circuit chip.
Public/Granted literature
- US20160244323A1 Integrated MEMS Device Public/Granted day:2016-08-25
Information query
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