Polymers for hard masks, hard mask compositions including the same, and methods for forming a pattern of a semiconductor device using a hard mask composition
Abstract:
The present inventive concepts relate to a polymer for a hard mask, a hard mask composition including a polymer for a hard mask as described herein, and a method for forming a pattern of a semiconductor device using a hard mask composition as described herein. The polymer includes a structure represented by the following chemical formula 1. In chemical formula 1, “A”, “Q”, “L”, “R1”, “R2”, “R3”, and “n” are the same as defined in the specification.
Information query
Patent Agency Ranking
0/0