Invention Grant
- Patent Title: Chemical mechanical polishing composition and process
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Application No.: US10534699Application Date: 2003-11-13
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Publication No.: US09676966B2Publication Date: 2017-06-13
- Inventor: Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
- Applicant: Haruki Nojo , Akitoshi Yoshida , Hirofumi Kashihara , Pascal Berar
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Lina Yang
- Priority: JP2002-329464 20021113
- International Application: PCT/US03/36618 WO 20031113
- International Announcement: WO2004/044076 WO 20040527
- Main IPC: H01L21/302
- IPC: H01L21/302 ; C03C15/00 ; C09G1/02

Abstract:
To provide a polishing slurry composition which effectively reduces the occurrence of scratches, and a method of polishing which reduces the occurrence of scratches while realizing an economical polishing step. The aforementioned object is attained by using a polishing slurry composition for polishing a semiconductor substrate containing a metal oxide particle, at least one water-soluble organic polymer and water, said slurry composition characterized in that, when a test substrate having a metal film, a shallow trench isolation film or dielectric film is polished by varying a rate of a polishing pad equipped in a polishing apparatus under a constant polishing pressure to achieve a maximum polishing rate.
Public/Granted literature
- US20090197412A1 Chemical mechanical polishing composition and process Public/Granted day:2009-08-06
Information query
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