Invention Grant
- Patent Title: Group 3B nitride crystal substrate
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Application No.: US13135829Application Date: 2011-07-15
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Publication No.: US09677192B2Publication Date: 2017-06-13
- Inventor: Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai , Takayuki Hirao
- Applicant: Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai , Takayuki Hirao
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2009-011264 20090121; JP2009-017289 20090128
- Main IPC: C30B9/12
- IPC: C30B9/12 ; C30B29/40

Abstract:
A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.
Public/Granted literature
- US20110274609A1 Group 3B nitride crystal substrate Public/Granted day:2011-11-10
Information query
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