Invention Grant
- Patent Title: Contact force sensor
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Application No.: US14648260Application Date: 2014-03-18
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Publication No.: US09677955B2Publication Date: 2017-06-13
- Inventor: Tadashi Matsudate , Shuji Inamura
- Applicant: SEMITEC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SEMITEC CORPORATION
- Current Assignee: SEMITEC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Jianq Chyun IP Office
- Priority: JP2013-067294 20130327
- International Application: PCT/JP2014/057304 WO 20140318
- International Announcement: WO2014/156823 WO 20141002
- Main IPC: G01L1/18
- IPC: G01L1/18 ; A61B18/14 ; G01L5/16 ; A61B18/00 ; A61B90/00

Abstract:
Provided is a contact force sensor of high sensitivity and high accuracy. This contact force sensor is fabricated by machining of a silicon semiconductor material. The contact force sensor is provided with a sensor configuration having a base part, and a contact force transmission part formed in a direction orthogonal to this base part. A stress-electricity conversion element for converting displacement of the contact force transmission part to an electrical signal, formed in the base part of the sensor configuration, is also provided.
Public/Granted literature
- US20150300895A1 CONTACT FORCE SENSOR AND PRODUCTION METHOD FOR SAME Public/Granted day:2015-10-22
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