Aspects of a continuous-time memory cell circuit are described. In various embodiments, the memory cell circuit may comprise a memory cell, a current source coupled to the memory cell, and circuitry for programming the memory cell at an adaptive rate, based on a target voltage for programming, using a feedback loop between a gate terminal of the memory cell and a reference control input. Based on the circuitry for programming, the memory cell may be programmed according to various voltage and/or current references, by linear injection and/or tunneling mechanisms. According to various aspects, the circuitry for programming drives a memory cell to converge to a voltage target for programming within a short period of time and to a suitable level of accuracy.