Invention Grant
- Patent Title: Access conductivity enhanced high electron mobility transistor
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Application No.: US14660124Application Date: 2015-03-17
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Publication No.: US09679762B2Publication Date: 2017-06-13
- Inventor: Andrew Paul Edwards , Xinyu Zhang , Yan Zhu
- Applicant: Toshiba Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Corporation
- Current Assignee: Toshiba Corporation
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/02 ; H01L29/66 ; H01L29/20 ; H01L29/423
Abstract:
A high electron mobility transistor (HEMT) device with enhanced conductivity in the transistor's non-gated access regions and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a heterojunction comprising a barrier layer formed on a channel layer. One or more intervening layers comprising a material suitable for increasing a fixed charge at the heterojunction is formed on a substantially planar surface of the barrier layer opposite the channel layer in the non-gated access region.
Public/Granted literature
- US20160276473A1 Access Conductivity Enhanced High Electron Mobility Transistor Public/Granted day:2016-09-22
Information query
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