Invention Grant
- Patent Title: Method for thermal annealing and a semiconductor device formed by the method
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Application No.: US15068762Application Date: 2016-03-14
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Publication No.: US09679773B1Publication Date: 2017-06-13
- Inventor: Manfred Engelhardt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/225 ; H01L21/268 ; C01B31/02
Abstract:
According to various embodiments, a method may include: disposing a dopant in a semiconductor region; forming a radiation absorption layer including or formed from at least one allotrope of carbon over at least a portion of the semiconductor region; and activating the dopant at least partially by irradiating the radiation absorption layer at least partially with electromagnetic radiation to heat the semiconductor region at least partially.
Information query
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