Invention Grant
- Patent Title: Over-voltage protection circuit
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Application No.: US15171950Application Date: 2016-06-02
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Publication No.: US09679887B1Publication Date: 2017-06-13
- Inventor: Tien-Chien Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/06
Abstract:
A device is disclosed that includes a first transistor, a second transistor, and a first PODE device. The second transistor is electrically coupled to the first transistor. The first PODE device is adjacent to a drain/source region of the second transistor. A control end of the first PODE device is electrically coupled to a drain/source end of the second transistor.
Information query
IPC分类:
