Invention Grant
- Patent Title: Layouts and fabrication methods for static random access memory
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Application No.: US14947196Application Date: 2015-11-20
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Publication No.: US09679902B2Publication Date: 2017-06-13
- Inventor: Gong Zhang , Yu Li
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201410734696 20141204
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/02 ; H01L21/8234 ; H01L21/84
Abstract:
A layout of a random access memory is provided. The layer comprises a first sub-layout having a first pattern including a first number (N1) of first patterns and an adjacent second pattern having a second number (N2) of second patterns; a second sub-layout having a first gate pattern and a second gate pattern; and an interchangeable third sub-layout having covering patterns variable for forming different static random access memory when used with the first sub-layout and the second sub-layout.
Public/Granted literature
- US20160163716A1 LAYOUTS AND FABRICATION METHODS FOR STATIC RANDOM ACCESS MEMORY Public/Granted day:2016-06-09
Information query
IPC分类:
