According to one embodiment, a semiconductor memory device includes: a substrate; a first stacked body; a semiconductor film; a charge storage film; and a second stacked body. The first stacked body includes: a plurality of first insulating layers; and a plurality of electrode layers. The second stacked body includes: a plurality of second insulating layers; a first insulating film provided between the plurality of second insulating layers and including a material different from that of the plurality of first insulating layers, the plurality of second insulating layers, and the plurality of electrode layers; and a second insulating film provided between the first insulating film and the substrate via the plurality of second insulating layers, including a same material as the first insulating film, and having lower film density than the first insulating film.