An electronic device is provided. An electronic device according to an example of the disclosed technology includes a semiconductor memory, the semiconductor memory including: a substrate including a recess formed in the substrate; a gate including at least a portion that is buried in the substrate; a junction formed at both sides of the gate in the substrate; and a memory element electrically connected to the junction at one side of the gate, wherein the junction includes: a barrier layer formed over the recess such that a thickness of the barrier layer formed over a bottom surface of the recess is different from that of the barrier layer formed over a side surface of the recess; a contact pad formed over the barrier layer so as to fill the recess; and an impurity region formed in the substrate and located under the contact pad.