Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14162859Application Date: 2014-01-24
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Publication No.: US09679982B2Publication Date: 2017-06-13
- Inventor: Daeik Kim , Jiyoung Kim , Jemin Park , Nakjin Son , Yoosang Hwang
- Applicant: Daeik Kim , Jiyoung Kim , Jemin Park , Nakjin Son , Yoosang Hwang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2013-0008125 20130124
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L21/8234 ; H01L21/265
Abstract:
According to a method of manufacturing a semiconductor device, hard mask lines are formed in parallel in a substrate and the substrate between the hard mask lines is etched to form grooves. A portion of the hard mask line and a portion of the substrate between the grooves are etched. A top surface of the etched portion of the substrate between the grooves is higher than a bottom surface of the groove. A conductive layer is formed to fill the grooves. The conductive layer is etched to form conductive patterns in the grooves, respectively.
Public/Granted literature
- US20140203357A1 Semiconductor Device and Method of Manufacturing the Same Public/Granted day:2014-07-24
Information query
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