Invention Grant
- Patent Title: Trench MOSFET shield poly contact
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Application No.: US14671590Application Date: 2015-03-27
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Publication No.: US09680003B2Publication Date: 2017-06-13
- Inventor: Ganming Qin , Edouard D. De Fresart , Pon Sung Ku , Michael F. Petras , Moaniss Zitouni , Dragan Zupac
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/40 ; H01L29/10 ; H01L29/423
Abstract:
A recess is formed at a semiconductor layer of a device to define a plurality of mesas. An active trench portion of the recess residing between adjacent mesas. A termination portion of the trench residing between the end of each mesa and a perimeter of the recess. The transverse spacing between the mesas and the lateral spacing between the mesas and an outer perimeter of a recess forming the mesas are substantially the same. A shield structure within the trench extends from the region between the mesas to the region between the ends of the mesas and the outer perimeter of the recess forming the mesas. A contact resides between a shield electrode terminal and the shield portion residing in the trench.
Public/Granted literature
- US20160284838A1 TRENCH MOSFET SHIELD POLY CONTACT Public/Granted day:2016-09-29
Information query
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