Invention Grant
- Patent Title: Semiconductor device structure and method for forming the same
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Application No.: US15071876Application Date: 2016-03-16
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Publication No.: US09680012B1Publication Date: 2017-06-13
- Inventor: Carlos H. Diaz , Jean-Pierre Colinge , Jonathan Tsung-Yung Chang , Yue-Der Chih
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/735 ; H01L29/80 ; H01L21/00 ; H01L21/338 ; H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L27/088 ; H01L29/66
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a top surface. The semiconductor device structure includes a first pillar structure over the substrate. The first pillar structure includes a first heavily n-doped layer, a first p-doped layer, an n-doped layer, and a first heavily p-doped layer, which are sequentially stacked together. The first pillar structure extends in a direction away from the substrate.
Information query
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