Invention Grant
- Patent Title: Semiconductor light-emitting device and semiconductor light-emitting device array
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Application No.: US15144267Application Date: 2016-05-02
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Publication No.: US09680063B2Publication Date: 2017-06-13
- Inventor: Mamoru Miyachi , Noriko Nihei
- Applicant: STANLEY ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2015-098880 20150514
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/12 ; H01L33/50 ; H01L33/56 ; H01L33/58 ; H01L33/38 ; H01L33/08 ; H01L33/22 ; H01L33/44 ; F21S8/10

Abstract:
A semiconductor light-emitting device comprises an optical semiconductor multilayer disposed above a support substrate, which has a structure in which a first semiconductor layer having a first conductivity type, an active layer having light emitting properties, and a second semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked from the support substrate side, in which a groove, which has a height exceeding at least the active layer from the support substrate side, is formed along an outer edge of the optical semiconductor multilayer, and which includes an external region being a region further outside than the groove, an inner region being a region further inside than the groove, and a connection region corresponding to a region where the groove is provided, in plan view.
Public/Granted literature
- US20160336479A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE ARRAY Public/Granted day:2016-11-17
Information query
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