Invention Grant
- Patent Title: Ferromagnetic tunnel junction element and method of driving ferromagnetic tunnel junction element
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Application No.: US14551095Application Date: 2014-11-24
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Publication No.: US09680088B2Publication Date: 2017-06-13
- Inventor: Takuya Ono
- Applicant: III Holdings 3, LLC
- Applicant Address: US DE Wilmington
- Assignee: III HOLDINGS 3, LLC
- Current Assignee: III HOLDINGS 3, LLC
- Current Assignee Address: US DE Wilmington
- Agency: McAndrews, Held & Malloy, Ltd.
- Priority: JP2008-056176 20080306
- Main IPC: G11C11/02
- IPC: G11C11/02 ; G11C11/56 ; G11C11/15 ; H01L43/08 ; B82Y25/00 ; G11C11/16 ; H01F10/32 ; H01L43/02 ; H01L43/10 ; H01L27/22

Abstract:
In a tunnel junction element having a ferromagnetic free layer, an insulating layer and a ferromagnetic fixed layer, in order to reduce the current necessary for spin-transfer magnetization reversal operation in the tunnel junction element, the ferromagnetic free layer comprises first and second ferromagnetic layers, a nonmagnetic metal layer is provided between these ferromagnetic layers, the nonmagnetic metal layer is such that magnetic coupling is preserved between the first and second ferromagnetic layers, also such that there is no influence on the crystal growth of the first and second ferromagnetic layers, the first ferromagnetic layer and the second ferromagnetic layer are placed such that the first ferromagnetic layer is in contact with the insulating layer, and the second ferromagnetic layer has a smaller magnetization than the first ferromagnetic layer.
Public/Granted literature
- US20150200356A1 FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD OF DRIVING FERROMAGNETIC TUNNEL JUNCTION ELEMENT Public/Granted day:2015-07-16
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