Invention Grant
- Patent Title: Manufacturing method of nitride phosphor or oxynitride phosphor
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Application No.: US12310673Application Date: 2007-09-07
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Publication No.: US09683168B2Publication Date: 2017-06-20
- Inventor: Masahiro Gotoh , Kenji Sakane
- Applicant: Masahiro Gotoh , Kenji Sakane
- Applicant Address: JP Anan-Shi JP Fujiyoshida-Shi
- Assignee: NICHIA CORPORATION,CITIZEN ELECTRONICS CO., LTD.
- Current Assignee: NICHIA CORPORATION,CITIZEN ELECTRONICS CO., LTD.
- Current Assignee Address: JP Anan-Shi JP Fujiyoshida-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2006-269796 20060929
- International Application: PCT/JP2007/067536 WO 20070907
- International Announcement: WO2008/041452 WO 20080410
- Main IPC: C09K11/77
- IPC: C09K11/77 ; C04B35/597 ; C04B35/626 ; C09K11/08

Abstract:
To reduce impurity contents of carbon and oxygen not contributing to light emission, then suppress deterioration of emission intensity of a phosphor, and improve emission efficiency of this phosphor. Therefore, there is provided a firing method of nitride or oxynitride phosphors, wherein a crucible 11 made of nitride is used as a firing container, and firing is performed, with this crucible covered with a lid (container 10), to manufacture the phosphor. The phosphor is expressed by a general composition formula MABOoN3-2/3O:Z in which element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is an activating agent, satisfying o≧0.
Public/Granted literature
- US20100001234A1 Manufacturing method of nitride phosphor or oxynitride phosphor Public/Granted day:2010-01-07
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