Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US14801437Application Date: 2015-07-16
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Publication No.: US09685376B2Publication Date: 2017-06-20
- Inventor: Yoshihiko Ikemoto , Hiroshi Inoue , Kiminori Ishido , Hiroaki Matsubara , Yukari Imaizumi
- Applicant: J-DEVICES CORPORATION
- Applicant Address: JP Usuki-shi, Oita
- Assignee: J-DEVICES CORPORATION
- Current Assignee: J-DEVICES CORPORATION
- Current Assignee Address: JP Usuki-shi, Oita
- Agency: Flynn, Thiel, Boutell & Tanis, P.C.
- Priority: JP2014-149989 20140723
- Main IPC: H01L23/24
- IPC: H01L23/24 ; H01L21/44 ; H01L21/78 ; H01L23/00
Abstract:
A semiconductor device including: a support plate 1; a semiconductor chip 2 mounted on one principal surface of the support plate 1 via an adhesive layer, with the element circuit surface of the chip being directed upward; an insulation material layer 4 that seals the semiconductor chip 2 and the periphery of the semiconductor chip; openings formed on an electrode arranged on the element circuit surface of the semiconductor chip 2 in the insulation material layer 4; conductive portions 6 formed in the openings so as to be connected to the electrode of the semiconductor chip; a wiring layer 5 formed on the insulation material layer 4 so as to be connected to the conductive portions 6 and partially extending to the peripheral region of the semiconductor chip 2; and external electrodes 7 formed on the wiring layer 5.
Public/Granted literature
- US20160027695A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-01-28
Information query
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