Invention Grant
- Patent Title: Integrated snubber in a single poly MOSFET
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Application No.: US14987610Application Date: 2016-01-04
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Publication No.: US09685435B2Publication Date: 2017-06-20
- Inventor: Sik Lui , Ji Pan
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H02M1/34
- IPC: H02M1/34 ; H01L27/06 ; H01L29/66 ; H01L29/78 ; H01L29/8605 ; H01L29/40 ; H01L49/02 ; H01L29/94
Abstract:
Aspects of the present disclosure describe MOSFET devices that have snubber circuits. The snubber circuits comprise one or more resistors with a dynamically controllable resistance that is controlled by changes to a gate and/or drain potentials of the one or more MOSFET structures during switching events.
Public/Granted literature
- US20160118380A1 INTEGRATED SNUBBER IN A SINGLE POLY MOSFET Public/Granted day:2016-04-28
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