Invention Grant
- Patent Title: Method for semiconductor device fabrication
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Application No.: US15084290Application Date: 2016-03-29
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Publication No.: US09685534B2Publication Date: 2017-06-20
- Inventor: Chun Hsiung Tsai , Wei-Yuan Lu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/312 ; H01L21/314 ; H01L21/762 ; H01L21/76 ; H01L29/66 ; H01L21/324 ; H01L21/3105 ; H01L29/167 ; H01L21/306 ; H01L29/78 ; H01L29/08 ; H01L29/161 ; H01L29/165
Abstract:
Provided is a method of forming a semiconductor device. The method includes providing a substrate; depositing a flowable dielectric material layer over the substrate; performing a wet annealing process and a dry annealing process to the flowable dielectric material layer. The wet annealing process includes a first portion followed by a second portion. The second portion is performed at a temperature above 850 degrees Celsius, and the first portion is performed at a temperature lower than that of the second portion and is performed for longer duration than the second portion. The dry annealing process is performed at a temperature at least 500 degrees Celsius.
Public/Granted literature
- US20160211347A1 Method for Semiconductor Device Fabrication Public/Granted day:2016-07-21
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