Invention Grant
- Patent Title: Silicon carbide (SiC) device with improved gate dielectric shielding
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Application No.: US14980708Application Date: 2015-12-28
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Publication No.: US09685550B2Publication Date: 2017-06-20
- Inventor: Martin Domeij
- Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/78 ; H01L29/10 ; H01L29/06
Abstract:
In one general aspect, an apparatus can include a silicon carbide (SiC) device can include a gate dielectric, a first doped region having a first conductivity type, a body region of the first conductivity type, and a second doped region having a second conductivity type. The second doped region has a first portion disposed between the first doped region and the body region, and the second doped region has a second portion disposed between the first doped region and the gate dielectric.
Public/Granted literature
- US20160190300A1 SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING Public/Granted day:2016-06-30
Information query
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