Invention Grant
- Patent Title: Magnetic memory device having a magnetic shield structure
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Application No.: US14841982Application Date: 2015-09-01
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Publication No.: US09685605B2Publication Date: 2017-06-20
- Inventor: Masashi Otsuka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2015-070398 20150330
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/08

Abstract:
A magnetic memory device includes a magnetic memory unit having a plurality of magnetic memory cells, a first surface, and a second surface opposite to the first surface, the first and second surfaces extending in a direction parallel to a direction in which the magnetic memory cells are arranged, a first magnetic shield unit extending below the first surface, and a second magnetic shield unit having a first portion that extends over the second surface and a second portion that extends from the first portion towards the first magnetic shield unit and is directly in contact with the first shield magnetic unit.
Public/Granted literature
- US20160293833A1 MAGNETIC MEMORY DEVICE HAVING A MAGNETIC SHIELD STRUCTURE Public/Granted day:2016-10-06
Information query
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