Invention Grant
- Patent Title: Power semiconductor module and power conversion device
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Application No.: US14992762Application Date: 2016-01-11
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Publication No.: US09685879B2Publication Date: 2017-06-20
- Inventor: Yoshiko Obiraki , Yasushi Nakayama , Yuji Miyazaki , Hiroshi Nakatake
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-045611 20120301
- Main IPC: H02M7/00
- IPC: H02M7/00 ; H01L25/07 ; H01L25/16 ; H02M7/537 ; H05K5/00 ; H05K7/20 ; H01L25/18 ; H01L23/498 ; H01L23/538

Abstract:
A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; first and second positive electrode terminals, first and second negative electrode terminals, and first and second AC terminals. Further, there are first and second wiring patterns that connect the self-arc-extinguishing type semiconductor elements to the DC and AC terminals. The outline of the power semiconductor module has a substantially quadrangular surface.
Public/Granted literature
- US20160172995A1 POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE Public/Granted day:2016-06-16
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