A test socket for IC devices includes a multi-layered socket housing with at least one center layer and first and second surface layers. The first and second surface layers have a thickness and dielectric constant less than that of the center layers. A plurality of contact members are located in center openings in the center layer with distal ends extending into openings in the first and second layers. The distal ends of the contact members having at least one dimension greater than the openings in the first and second surface layers to retain the contact members in the socket housing. The contact members include center portions with major diameters less than the diameters of the center openings, such that an air gap is maintained between the contact members and the center layer.