Invention Grant
- Patent Title: Form of silicon and method of making the same
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Application No.: US14903131Application Date: 2014-07-08
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Publication No.: US09695051B2Publication Date: 2017-07-04
- Inventor: Timothy A. Strobel , Duck Young Kim , Oleksandr O. Kurakevych
- Applicant: CARNEGIE INSTITUTION OF WASHINGTON
- Applicant Address: US DC Washington
- Assignee: CARNEGIE INSTITUTION OF WASHINGTON
- Current Assignee: CARNEGIE INSTITUTION OF WASHINGTON
- Current Assignee Address: US DC Washington
- Agency: Stein IP, LLC
- International Application: PCT/US2014/045745 WO 20140708
- International Announcement: WO2015/006322 WO 20150115
- Main IPC: C01B33/02
- IPC: C01B33/02 ; C01B33/00 ; C01B33/021 ; C01B33/06
Abstract:
The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
Public/Granted literature
- US20160176716A1 FORM OF SILICON AND METHOD OF MAKING THE SAME Public/Granted day:2016-06-23
Information query
