Invention Grant
- Patent Title: Synthetic gel for crystal growth inducing only secondary growth from surface of silicalite-1 or zeolite beta seed crystal
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Application No.: US14408144Application Date: 2012-06-15
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Publication No.: US09695055B2Publication Date: 2017-07-04
- Inventor: Kyung Byung Yoon , Cao Thanh Tung Pham , Hyun Sung Kim
- Applicant: Kyung Byung Yoon , Cao Thanh Tung Pham , Hyun Sung Kim
- Applicant Address: KR Seoul
- Assignee: INTELLECTUAL DISCOVERY CO., LTD.
- Current Assignee: INTELLECTUAL DISCOVERY CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Brooks Kushman P.C.
- International Application: PCT/KR2012/004726 WO 20120615
- International Announcement: WO2013/187542 WO 20131219
- Main IPC: C01B39/48
- IPC: C01B39/48

Abstract:
A synthetic gel for crystal growth, which induces only secondary growth from the surface of a silicalite-1 or zeolite beta seed crystal and cannot induce crystal nucleation in the synthetic gel for crystal growth or on the surface of the seed crystal. The synthetic gel contains fumed silica, tetraethylammonium hydroxide (TEAOH), [(NH4)2SiF6], KOH, and H2O, or contains tetraethylorthosilicate (TEOS), tetraethylammonium hydroxide (TEAOH), hydrogen fluoride, and H2O.
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