Invention Grant
- Patent Title: Semiconductor manufacturing system and semiconductor manufacturing method
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Application No.: US14614574Application Date: 2015-02-05
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Publication No.: US09695512B2Publication Date: 2017-07-04
- Inventor: Kazuhiro Matsuo , Fumiki Aiso
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: C23C16/52
- IPC: C23C16/52 ; H01L21/66 ; H01L21/02 ; C23C16/455 ; C23C16/44

Abstract:
In one embodiment, a semiconductor manufacturing system includes a film forming apparatus configured to form a film on a surface of a wafer. The system further includes a gas supply module configured to supply at least a type of source gas for the film into the film forming apparatus. The system further includes a measurement module configured to measure a discharge amount of an exhaust gas from the film forming apparatus. The system further includes a controller configured to calculate a value corresponding to a surface area of the wafer based on the discharge amount of the exhaust gas from the film forming apparatus, and to control a supply amount of the source gas to the film forming apparatus based on the value corresponding to the surface area of the wafer.
Public/Granted literature
- US20160060762A1 SEMICONDUCTOR MANUFACTURING SYSTEM AND SEMICONDUCTOR MANUFACTURING METHOD Public/Granted day:2016-03-03
Information query
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