Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US15062153Application Date: 2016-03-06
-
Publication No.: US09696489B2Publication Date: 2017-07-04
- Inventor: Shinichi Watanuki , Atsuro Inada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2015-060872 20150324
- Main IPC: G02B6/122
- IPC: G02B6/122 ; G02F1/025 ; G02B6/136

Abstract:
A semiconductor substrate, an insulating layer made of silicon oxide formed on the semiconductor substrate and a semiconductor layer made of silicon formed on the insulating layer are provided, and the semiconductor layer constitutes an optical waveguide in an optical signal transmission line section and an optical modulator in an optical modulation section. Also, the insulating layer is removed except for a part thereof to have a hollow structure with a cavity, and both side surfaces and a lower surface of each of the semiconductor layers constituting the optical waveguide and the optical modulator are exposed and covered with air.
Public/Granted literature
- US20160282554A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-09-29
Information query