Invention Grant
- Patent Title: Composition for forming a resist underlayer film, and pattern-forming method
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Application No.: US15159054Application Date: 2016-05-19
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Publication No.: US09696626B2Publication Date: 2017-07-04
- Inventor: Fumihiro Toyokawa , Shin-ya Nakafuji , Gouji Wakamatsu
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-198837 20120910
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/11 ; C07C279/08 ; C07C217/18 ; G03F7/26 ; G03F7/40 ; G03F7/09 ; H01L21/02 ; H01L21/027 ; H01L21/306 ; H01L21/308 ; C08G8/04 ; C08G8/20 ; C08L61/06 ; H01L21/3065 ; H01L21/3105

Abstract:
A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.
Public/Granted literature
- US20160259247A1 COMPOSITION FOR FORMING A RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD Public/Granted day:2016-09-08
Information query
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