A mirror (1) for the EUV wavelength range having a reflectivity of greater than 40% for at least one angle of incidence of between 0° and 25° includes a substrate (S) and a layer arrangement, wherein the layer arrangement has at least one non-metallic individual layer (B, H, M), and wherein the non-metallic individual layer (B, H, M) has a doping with impurity atoms of between 10 ppb and 10%, in particular between 100 ppb and 0.1%, providing the non-metallic individual layer (B, H, M) with a charge carrier density of greater than 6*1010 cm−3 and/or an electrical conductivity of greater than 1*10−3 S/m, in particular with a charge carrier density of greater than 6*1013 cm−3 and/or an electrical conductivity of greater than 1 S/m.