According to one embodiment, a nonvolatile semiconductor memory device includes memory cell units, bit lines, word lines, and a controller. Each of the memory cell units includes a plurality of memory cells connected in series. Bit lines are connected respectively to the corresponding memory cell units. Each of the word lines is commonly connected to control gates of the corresponding memory cells of the memory cell units. The controller is configured to control a programming operation of data to the memory cells. The controller is configured to execute a first procedure including programming the data to the memory cell connected to the (4n−3)th (n being a natural number) bit line and the memory cell connected to the (4n−2)th bit line, and a second procedure including programming the data to the memory cell connected to the (4n−1)th bit line and the memory cell connected to the 4nth bit line.