Provided is a semiconductor storage device including: first memory cells; first word lines; first bit lines; a first common bit line; second memory cells; second word lines; second bit lines; a second common bit line; a first selection circuit that connects the first common bit line to a first bit line selected from the first bit lines; a second selection circuit that connects the second common bit line to a second bit line selected from the second bit lines; a word line driver that activates any one of the first and second word lines; a reference current supply unit that supplies a reference current to a common bit line among the first and second common bit lines, the common bit line not being electrically connected to a data read target memory cell; and a sense amplifier that amplifies a potential difference between the first and second common bit lines.