Invention Grant
- Patent Title: Semiconductor device with integrated antenna
-
Application No.: US14296067Application Date: 2014-06-04
-
Publication No.: US09698110B2Publication Date: 2017-07-04
- Inventor: Motoi Ishida
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-129464 20130620
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/495 ; H01L23/498 ; H01L23/31 ; H01L23/00

Abstract:
A high frequency signal can be transmitted and received in a semiconductor device. In a QFP, an antenna (frame body) is supported by three suspension leads. The antenna is arranged to be symmetrical with respect to a first virtual diagonal line of a plan view of a sealing body. One of the three suspension leads is arranged on the first virtual diagonal line. With this configuration, discontinuities of a wave of a signal in the antenna can be reduced, as a result of which the high frequency signal of 5 Gbps class can be transmitted and received in the QFP.
Public/Granted literature
- US20140374888A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-12-25
Information query
IPC分类: