Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15168349Application Date: 2016-05-31
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Publication No.: US09698154B2Publication Date: 2017-07-04
- Inventor: Joon Sung Lim , Kyu Baik Chang , Sung Hoi Hur , Woo Jung Kim
- Applicant: Joon Sung Lim , Kyu Baik Chang , Sung Hoi Hur , Woo Jung Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0110977 20150806
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L27/115 ; H01L27/11575 ; H01L27/1157 ; H01L27/11573 ; H01L21/8238 ; H01L21/8234
Abstract:
A semiconductor device includes a substrate, a plurality of memory cell arrays, and an air gap structure. The substrate includes a cell region, a peripheral circuit region, and a boundary region. The boundary region is between the cell region and the peripheral circuit region. The plurality of memory cell arrays are on the cell region. The air gap structure includes a trench formed in the boundary region of the substrate. The air gap structure defines an air gap.
Public/Granted literature
- US20170040335A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-02-09
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