Invention Grant
- Patent Title: FinFET with trench field plate
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Application No.: US14584823Application Date: 2014-12-29
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Publication No.: US09698227B2Publication Date: 2017-07-04
- Inventor: Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L29/40 ; H01L29/66 ; H01L29/78 ; H01L29/06
Abstract:
An integrated circuit device includes a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type, a trench formed in the pad layer, the trench extending through an interface of the body portion and the drift region portion, a gate formed in the trench and over a top surface of the pad layer along the interface of the body portion and the drift region portion, an oxide formed in the trench on opposing sides of the gate, and a field plate embedded in the oxide on each of the opposing sides of the gate.
Public/Granted literature
- US20150118814A1 FinFET with Trench Field Plate Public/Granted day:2015-04-30
Information query
IPC分类:
