Invention Grant
- Patent Title: Integrated circuits with replacement metal gates and methods for fabricating the same
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Application No.: US15071600Application Date: 2016-03-16
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Publication No.: US09698241B1Publication Date: 2017-07-04
- Inventor: Suraj K. Patil , Min-Hwa Chi , Mitsuhiro Togo
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/66 ; H01L27/092 ; H01L29/51
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In one embodiment, a method for fabricating integrated circuits includes forming a gate dielectric overlying a substrate, and forming a base work function layer that includes tungsten overlying the gate dielectric. The base work function layer overlies the gate dielectric in a first and second region, where the first region is one of a pFET region or an nFET region and the second region is the other of the pFET region or the nFET region. A mask is formed over the first region, and then the second region is exposed. A work function value of the base work function layer in the second region is altered to produce a modified work function layer. The mask is removed from the over the first region, and a gate electrode is formed overlying the base and modified work function layers.
Information query
IPC分类:
