Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14802228Application Date: 2015-07-17
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Publication No.: US09698258B2Publication Date: 2017-07-04
- Inventor: Yu Shin Ryu , Tae Hoon Lee , Bo Seok Oh
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2014-0187468 20141223
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L27/092 ; H01L29/06 ; H01L29/66 ; H01L29/10 ; H01L21/8238
Abstract:
The present examples relate to a semiconductor device used in an electric device or high voltage device. The present examples improve Rsp by minimizing drift region resistance by satisfying breakdown voltage by improving the structure of a drift region through which current flows in a semiconductor device to provide optimal results. Moreover, a high frequency application achieves useful results by reducing a gate charge Qg for an identical device pitch to that of an alternative technology.
Public/Granted literature
- US20160181419A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-06-23
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