Invention Grant
- Patent Title: Fin-type device system and method
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Application No.: US14320897Application Date: 2014-07-01
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Publication No.: US09698267B2Publication Date: 2017-07-04
- Inventor: Stanley Seungchul Song , Mohamed Hassan Abu-Rahma , Beom-Mo Han
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/78 ; H01L27/108 ; H01L29/66 ; G11C11/40
Abstract:
A transistor is disclosed and includes forming a gate of a transistor within a substrate having a surface and a buried oxide (BOX) layer within the substrate and adjacent to the gate at a first BOX layer face. The method also includes a raised source-drain channel (“fin”), where at least a portion of the fin extends from the surface of the substrate, and where the fin has a first fin face adjacent to a second BOX layer face of the BOX layer.
Public/Granted literature
- US20140313821A1 FIN-TYPE DEVICE SYSTEM AND METHOD Public/Granted day:2014-10-23
Information query
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