Invention Grant
- Patent Title: Semiconductor device comprising an oxide semiconductor, module, and electronic device
-
Application No.: US14883971Application Date: 2015-10-15
-
Publication No.: US09698274B2Publication Date: 2017-07-04
- Inventor: Shunpei Yamazaki , Akihisa Shimomura , Yasumasa Yamane , Naoto Yamade , Tetsuhiro Tanaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2014-213910 20141020; JP2014-213913 20141020
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/417 ; H01L29/45 ; H01L29/49 ; H01L27/12
Abstract:
A transistor with stable electrical characteristics or a transistor with normally-off electrical characteristics. The transistor is a semiconductor device including a conductor, a semiconductor, a first insulator, and a second insulator. The semiconductor is over the first insulator. The conductor is over the semiconductor. The second insulator is between the conductor and the semiconductor. The first insulator includes fluorine and hydrogen. The fluorine concentration of the first insulator is higher than the hydrogen concentration of the first insulator.
Public/Granted literature
- US20160111547A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MODULE, AND ELECTRONIC DEVICE Public/Granted day:2016-04-21
Information query
IPC分类:
