Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, array substrate, display device
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Application No.: US14421967Application Date: 2014-04-10
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Publication No.: US09698278B2Publication Date: 2017-07-04
- Inventor: Chunsheng Jiang
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201310718983 20131224
- International Application: PCT/CN2014/075099 WO 20140410
- International Announcement: WO2015/096298 WO 20150702
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L27/12 ; H01L29/66 ; H01L21/425 ; H01L21/426 ; H01L21/477

Abstract:
There are provided a thin film transistor and a manufacturing method thereof, an array substrate, a display device. The manufacturing method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate. The forming the metal oxide semiconductor active layer includes forming a zinc oxide-based binary metal oxide pattern layer on a substrate. The pattern layer includes a first pattern, a second pattern and a third pattern. Metal doping ions are implanted into the zinc oxide-based binary metal oxide pattern layer by using an ion implantation technology, so that a binary metal oxide of the third pattern is transformed into a multi-element metal oxide semiconductor, and the metal oxide semiconductor active layer is formed.
Public/Granted literature
- US20150349141A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, DISPLAY DEVICE Public/Granted day:2015-12-03
Information query
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