Invention Grant
- Patent Title: Epitaxial wafer, method for producing the same, semiconductor element, and optical sensor device
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Application No.: US14260110Application Date: 2014-04-23
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Publication No.: US09698287B2Publication Date: 2017-07-04
- Inventor: Kei Fujii , Kaoru Shibata , Katsushi Akita
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; F. Brock Riggs
- Priority: JP2013-095756 20130430
- Main IPC: H01L31/105
- IPC: H01L31/105 ; H01L31/0352 ; H01L31/0304 ; H01L31/18 ; H01L21/02
Abstract:
An epitaxial wafer of the present invention includes a substrate composed of a III-V compound semiconductor, a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate, and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure. The substrate has a plane orientation of (100) and an off angle of −0.030° or more and +0.030° or less, and a surface of the top layer has a root-mean-square roughness of less than 10 nm.
Public/Granted literature
- US20140319463A1 EPITAXIAL WAFER, METHOD FOR PRODUCING THE SAME, SEMICONDUCTOR ELEMENT, AND OPTICAL SENSOR DEVICE Public/Granted day:2014-10-30
Information query
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